Formation of Dual Bands in Mixed-Halide Perovskites During Photoinduced Halide Segregation
Source abstract
Abstract
In mixed-halide perovskites, photoinduced halide segregation is known to occur, leading to the formation of segregated domains and, thereby, an additional low-energy photoluminescence emission. Here, we probe an archetypical mixed-halide perovskite from the perspective of band energies on the microscopic scale. Through optically coupled scanning tunneling spectroscopy, we determine the band energies of halide-segregated domains, namely, iodide-rich and bromide-rich ones. We estimate the composition of the phases and identify energy-levels associated with them as would be “seen” by charge carriers in devices. The appearance of dual bands due to the segregation process is explained in light of the molecular orbitals involved in forming the bands. Kelvin probe force microscopy upon illumination provides the local map of the contact potential difference throughout the sample surface, leading to the inference that the grain boundaries act as active sites for iodide migrations; that is, the low bandgap iodide-rich domains form at the grain boundaries.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
UGC-DAE Consortium for Scientific Research University Campus, Khandwa Road, Indore 452001, India
Funding
Council of Scientific and Industrial Research, India · University Grants Commission · Science and Engineering Research Board · Department of Science and Technology, Ministry of Science and Technology, India · Asian Office of Aerospace Research and Development
References (36)
Show source-provided references
1. 10.1038/s41563-018-0071-z10.1038/s41563-018-0071-z ↗
2. 10.1002/adom.20170130210.1002/adom.201701302 ↗
3. 10.1021/acs.chemrev.8b0053910.1021/acs.chemrev.8b00539 ↗
4. 10.1039/C7TA00404D10.1039/C7TA00404D ↗
5. 10.1038/nature1413310.1038/nature14133 ↗
6. 10.1021/ic401215x10.1021/ic401215x ↗
7. 10.1021/nl400349b10.1021/nl400349b ↗
8. 10.1021/acsami.5b0215910.1021/acsami.5b02159 ↗
9. 10.1039/C7TA00058H10.1039/C7TA00058H ↗
10. 10.1021/acs.chemmater.9b0400010.1021/acs.chemmater.9b04000 ↗
11. 10.1021/jacs.8b1121010.1021/jacs.8b11210 ↗
12. 10.1021/acs.nanolett.5b0518110.1021/acs.nanolett.5b05181 ↗
13. 10.1021/acsenergylett.7b0115110.1021/acsenergylett.7b01151 ↗
14. 10.1039/C4SC03141E10.1039/C4SC03141E ↗
15. 10.1021/acs.nanolett.6b0445310.1021/acs.nanolett.6b04453 ↗
16. 10.1021/acs.jpclett.6b0022610.1021/acs.jpclett.6b00226 ↗
17. 10.1038/s41467-017-00284-210.1038/s41467-017-00284-2 ↗
18. 10.1038/s41467-021-23008-z10.1038/s41467-021-23008-z ↗
19. 10.1002/aenm.20190348810.1002/aenm.201903488 ↗
20. 10.1021/acsenergylett.8b0145010.1021/acsenergylett.8b01450 ↗
21. 10.1002/adfm.20220043110.1002/adfm.202200431 ↗
22. 10.1039/D1TA02878B10.1039/D1TA02878B ↗
23. 10.1021/acsenergylett.7b0052510.1021/acsenergylett.7b00525 ↗
24. 10.1021/acsami.7b0681610.1021/acsami.7b06816 ↗
25. 10.1002/advs.20150030110.1002/advs.201500301 ↗
26. 10.1021/acsenergylett.7b0028210.1021/acsenergylett.7b00282 ↗
27. 10.1021/acsenergylett.0c0247510.1021/acsenergylett.0c02475 ↗
28. 10.1002/adma.20210558510.1002/adma.202105585 ↗
29. 10.1021/acs.nanolett.8b0050510.1021/acs.nanolett.8b00505 ↗
30. 10.1021/acsenergylett.6b0063510.1021/acsenergylett.6b00635 ↗
31. 10.1002/anie.20211235210.1002/anie.202112352 ↗
32. 10.1021/acsaem.8b0002610.1021/acsaem.8b00026 ↗
33. 10.1021/acs.jpcc.7b0592910.1021/acs.jpcc.7b05929 ↗
34. 10.1021/acs.nanolett.0c0141710.1021/acs.nanolett.0c01417 ↗
35. 10.1039/C5CC05205J10.1039/C5CC05205J ↗
36. 10.1021/acs.jpcc.8b0696810.1021/acs.jpcc.8b06968 ↗