Growth and applications of GeSn-related group-IV semiconductor materials
Source abstract
Abstract
We review the technology of Ge1-x Sn x -related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1-x Sn x -related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge1-x Sn x -related material thin films and the studies of the electronic properties of thin films, metals/Ge1-x Sn x , and insulators/Ge1-x Sn x interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge1-x Sn x -related materials, as well as the reported performances of electronic devices using Ge1-x Sn x related materials.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Photonic and Optical Devices · Nanowire Synthesis and Applications · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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