journal article·2024-06

Testing Semiconductor Products Using Low-Frequency Noise Parameters

M. I. Gorlov, V. A. Sergeev

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Abstract

Abstract This article continues and supplements the article with the same title published in Russian Journal of Nondestructive Testing, no. 1, 2022, which provides six ways to assess the quality and reliability of semiconductor products (SCPs) using low-frequency (LF) noise parameters. This paper presents a generalization of the results previously obtained by the authors and describes four more methods for diagnosing and evaluating the reliability of SCPs by varying the parameters of low- frequency noise under additional external influences such as electrostatic discharge and (or) thermal annealing. It is shown that additional impacts make it possible to increase the reliability of the assessment of the SCP reliability.
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Research context

OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Silicon Carbide Semiconductor Technologies · Electrostatic Discharge in Electronics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (16)

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1. Gorlov, M.I. and Sergeev, V.A., Testing semiconductor products using low-frequency noise parameters, Russ. J. Nondestr. Test., 2022, vol. 58, no. 1, pp. 10–22.10.1134/S1061830922010028 ↗
2. Zhigal’skiy, G.P., Nondestructive quality control and prediction of reliability of integrated circuits by electrical noise and reliability parameters, Radiotekh. Elektron., 2005, no. 5, pp. 1–35.
3. Claeys, C., Simoen, E., Agopian, P.G.D., Martino, J.A., Aoulaiche, M., Cretus, B., Fang, W., Rooyackers, R., Vandooren, A., Veloso, A., Jurczak, M., Collaert, N., and Thean, A., The smaller the noisier? Low frequency noise diagnostics of advanced semiconductor devices, 2015 30-th Symp. Microelectron. Technol. Devices (SBMicro) (Salvador, 2015). https://doi.org/10.1109/SBMicro.2015.729810410.1109/SBMicro.2015.7298104 ↗
4. Romantsov, V.P. and Dolganov, M.V., Prognozirovanie nadezhnosti integral’nykh mikroskhem po parametram nizkochastotnykh shumov (Predicting the Reliability of Integrated Circuits Based on Low-Frequency Noise Parameters), Kiev: IPME, 1990.
5. Vasil’ev, V.A., Piganov, M.N., and Zaitsev, V.Yu., Quality control of semiconductor diodes by noise voltage, Aktual. Probl. Radiotekh. Electron., 1999, no. 2, pp. 63–65.
6. Razumenko, D., Low-frequency noise of electronic components as a tool for diagnosing internal defects, Kompon. Tekhnol., 2008, no. 9 (86), pp. 168–174.
7. Bordyuzha, O.L., Diagnostic quality control and reliability of silicon bipolar integrated circuits, Cand. Sci. (Eng.) Dissertation, Voronezh: VSTU, 1998.
8. Antonova, E.A., The effect of X-ray radiation on the parameters of semiconductor products, Cand. Sci. (Eng.) Dissertation, Voronezh: VSTU, 2013.
9. Yang, X., Chen, Y.Q., Hou, B., Xu, X., Wang, J., Huang, Y., Chen, Q., and Zhou, C., Degradation behavior and defect analysis for SiC power MOSFETs based on low-frequency noise under repetitive power-cycling stress, IEEE Trans. Electron. Devices, 2021, vol. 68, no. 2, pp. 666–671. https://doi.org/10.1109/TED.2020.304401810.1109/TED.2020.3044018 ↗
10. Yang, F., Liao, M., Zeng, B., Yang, P., and Chen, Y., Investigation on the degradation mechanism of A1GaN/GaN HEMTs under the effect of microwave pulses at different powers, 2023 Global Reliab. Progn. Health Manage. Conf. (PHM-Hangzhou) (Hangzhou, 2023), pp. 1–5. https://doi.org/10.1109/PHM-Hangzhou58797.2023.1048277510.1109/PHM-Hangzhou58797.2023.10482775 ↗
11. Yakubovich, B.I., The influence of penetrating radiation on the electrical low-frequency noise of semiconductors, Usp. Prikl. Fiz, 2021, no. 3, pp. 181–186.10.51368/2307-4469-2021-9-3-181-186 ↗
12. Gorlov, M.I. and Zharkikh, A.N., RF Patent no. 2230335, 2004, no. 16.
13. Gorlov, M.I., Zharkikh, A.N., and Yemelyanov, V.A., RF Patent no. 2234163, 2004.
14. Gorlov, M.I., Yemelyanov, V.A., and Zharkikh, A.N., RF Patent no. 2253168, 2005.
15. Gorlov, M.I., Smirnov, D.Yu., and Anufriev, D.L., RF Patent no. 2298052, 2007.
16. Bulgakov, O.M. and Taravkov, M.V., Statistical criterion for evaluating the reliability of semiconductor devices and integrated circuits based on low-frequency noise characteristics, Vestn. Voronezh. Inst. MVD Ross., 2012, no. 3, pp. 147–155.