DataVXACS Energy LettersPaper
journal article·2025-05-09

26.6%-Efficiency Silicon Heterojunction Solar Cell with High-Quality Cerium and Hydrogen Codoped Indium Oxide Transparent Electrode

Cao Yu, Kun Gao, Qi Wang, Chenran He, Gangqiang Dong, Qian Kang, Chen-Wei Peng, Chaochao Mo, Xinyu Wang, Jun Zhou, Xinmin Cao, Jian Zhou, Xinbo Yang, Xiaohong Zhang

ACS Energy Letters· Volume 10· Issue 5
Publisher page
Source abstract

Abstract

High-performance transparent conductive oxides (TCOs) with low electrical resistivity and high transparency are highly desirable for silicon heterojunction (SHJ) solar cells. Herein, high-quality cerium (Ce) and hydrogen codoped indium oxide (ICO:H) is prepared by reactive plasma deposition (RPD) and verified on SHJ solar cells. The effects of CeO 2 doping ratio, H 2 /Ar ratio, and annealing treatment on the optoelectronic properties of ICO:H were investigated and optimized. We obtain high-performance ICO:H films with simultaneous state-of-the-art mobility of 169.2 cm 2 /(V s), low carrier concentration of 1.9 × 10 20 cm –3, and high transparency. As a result, a certified power conversion efficiency (PCE) of 26.6% is achieved for SHJ solar cells with ICO:H, featuring less dependency on the underlying hydrogenated nanocrystalline silicon oxide (nc-SiO x:H) layer. The implementation of ICO:H in an industrial production line demonstrates a higher PCE and better yield.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materialsMaterials processing

OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies

Soochow University

College of Energy

Suzhou Maxwell Technologies Co., Ltd.

School of Information Science and Technology

Beijing University of Technology

Suzhou Institute of Renewable Energy & Photoelectronics

Funding

Suzhou Municipal Science and Technology Bureau · Collaborative Innovation Center of Suzhou Nano Science and Technology · National Key Research and Development Program of China · Jiangsu Provincial Department of Education · Basic Research Program of Jiangsu Province · Jiangsu Provincial Department of Science and Technology · National Natural Science Foundation of China

References (37)

Show source-provided references
1. 10.1038/s41560-023-01255-210.1038/s41560-023-01255-2 ↗
2. 10.1038/s41560-023-01388-410.1038/s41560-023-01388-4 ↗
3. 10.1038/s41560-019-0463-610.1038/s41560-019-0463-6 ↗
4. 10.1038/s41560-020-00768-410.1038/s41560-020-00768-4 ↗
5. 10.1016/j.joule.2020.03.00310.1016/j.joule.2020.03.003 ↗
6. 10.1126/science.abn891010.1126/science.abn8910 ↗
7. 10.1002/aenm.20240103910.1002/aenm.202401039 ↗
8. 10.1126/science.adf587210.1126/science.adf5872 ↗
9. 10.1126/science.adg009110.1126/science.adg0091 ↗
10. 10.1007/s10854-023-10269-110.1007/s10854-023-10269-1 ↗
11. 10.1016/j.solener.2019.12.04010.1016/j.solener.2019.12.040 ↗
12. 10.1016/j.solmat.2016.01.00510.1016/j.solmat.2016.01.005 ↗
13. 10.1016/j.solmat.2023.11248010.1016/j.solmat.2023.112480 ↗
14. 10.1103/PhysRevMaterials.3.08460810.1103/PhysRevMaterials.3.084608 ↗
15. 10.1016/j.solmat.2015.09.03310.1016/j.solmat.2015.09.033 ↗
16. 10.1016/j.solmat.2013.11.03010.1016/j.solmat.2013.11.030 ↗
17. 10.1016/j.jcrysgro.2008.05.01210.1016/j.jcrysgro.2008.05.012 ↗
18. 10.1016/j.jpowsour.2021.23010110.1016/j.jpowsour.2021.230101 ↗
19. 10.1116/1.142159510.1116/1.1421595 ↗
20. 10.1002/pip.356510.1002/pip.3565 ↗
21. 10.1016/j.solmat.2024.11283610.1016/j.solmat.2024.112836 ↗
22. 10.1016/j.solmat.2024.11272710.1016/j.solmat.2024.112727 ↗
23. 10.1016/j.vacuum.2022.11151210.1016/j.vacuum.2022.111512 ↗
24. 10.1016/j.ceramint.2020.09.00610.1016/j.ceramint.2020.09.006 ↗
25. 10.1038/s41427-022-00421-410.1038/s41427-022-00421-4 ↗
26. 10.1016/j.matlet.2018.04.10210.1016/j.matlet.2018.04.102 ↗
27. 10.1007/s10854-021-07689-210.1007/s10854-021-07689-2 ↗
28. 10.1103/PhysRevB.88.08530510.1103/PhysRevB.88.085305 ↗
29. 10.1002/pip.338810.1002/pip.3388 ↗
30. 10.1063/1.271176810.1063/1.2711768 ↗
31. 10.1103/PhysRevMaterials.6.05540110.1103/PhysRevMaterials.6.055401 ↗
32. 10.1116/1.233357210.1116/1.2333572 ↗
33. 10.1002/pssa.20153280610.1002/pssa.201532806 ↗
34. 10.7567/JJAP.54.01AB0510.7567/JJAP.54.01AB05 ↗
35. 10.1021/acsami.5b0442010.1021/acsami.5b04420 ↗
36. 10.1002/pip.356510.1002/pip.3565 ↗
37. Fujiwara H. · 2018 · 21210.1007/978-3-319-75377-5 ↗