Electric Power and Current Collection in Semiconductor Devices with Suppressed Electron–Hole Recombination
Source abstract
Abstract
We revisit the criteria of photovoltaic (PV) efficiency and current collection in X-ray detectors (RDs) for semiconductors with suppressed carrier recombination. These materials render the promise of ultimate performance as thin-film PV cells (for efficiency) and RDs (for current collection). We show that the device performance can be understood neglecting defect contributions to the uniform properties of semiconductors and demonstrate this in the case of perovskites RDs. We also show that the efficiencies of the best PV cells are very close to the ultimate PV limits calculated in this Letter.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Naval Research Laboratory, Washington, D.C. 20375, United States
Department of Physics and Astronomy, University of Toledo, Toledo,Ohio 43606, United States
Funding
Office of Naval Research
References (49)
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