Determination of the thickness, electrical conductivity, and impurity activation energy of semiconductor layers from microwave reflection spectra
Source abstract
Abstract
It is shown that the conductivity, thickness, and impurity activation energy of semiconductor layers can be determined from the results of measuring the frequency dependence of the reflection coefficient of microwave electromagnetic radiation at different temperatures. A technique for solving the corresponding inverse problem is presented.
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Research context
OpenAlex topics: Optical and Acousto-Optic Technologies · Advanced Research in Systems and Signal Processing
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References (10)
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