Reversible Oxidative p-Doping in 2D Tin Halide Perovskite Field-Effect Transistors
Abstract
Research context
OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Gas Sensing Nanomaterials and Sensors
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Affiliations
Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, United Kingdom
Department of Physics and Astronomy, Institute of Applied Physics, Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea
Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea
Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co. Ltd., Suwon 16678, Gyeonggi-do, Korea
School of Earth and Environmental Sciences, Seoul National University, Seoul 08826, Korea
Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
Department of Materials Science and Engineering, Research Institute of Advanced Materials, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
Funding
Samsung · Engineering and Physical Sciences Research Council · Royal Society · UK Research and Innovation · National Research Foundation of Korea · Tata Sons · Seoul National University