Inhomogeneous Defect Distribution in Mixed-Polytype Metal Halide Perovskites
Source abstract
Abstract
The competition between corner-, edge-, and face-sharing octahedral networks is a cause of phase inhomogeneity in metal halide perovskite thin-films. Here we probe the charged iodine vacancy distribution and transport at the junction between cubic and hexagonal polytypes of CsPbI3 from first-principles materials modeling. We predict a lower defect formation energy in the face-sharing regions, which correlates with a longer Pb–I bond length and causes a million-fold increase in local defect concentration. These defects are predicted to be more mobile in the face-sharing regions with a reduced activation energy for vacancy-mediated diffusion. We conclude that hexagonal phase inclusions or interfaces will act as defect sinks that could influence carrier dynamics in perovskite-based solar cells and electrical devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials, Imperial College London, LondonSW7 2AZ, United Kingdom
Department of Materials Science and Engineering, Yonsei University, Seoul03722, Korea
Department of Chemical Engineering and Biotechnology, University of Cambridge, CambridgeCB3 0AS, United Kingdom
SKKU Advanced Institute of Nanotechnology and Department of Nano Engineering, Sungkyunkwan University, Suwon16419, Korea
Department of Physics, Ewha Womans University, Seoul03760, Korea
Funding
Korea Health Industry Development Institute
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