H-Center and V-Center Defects in Hybrid Halide Perovskites
Source abstract
Abstract
The self-trapping of holes with the formation of a molecular X2– anion is a well-established process in metal halide (MX) crystals, but V-center (2X– + h+ → X2–) and H-center (X– + Xi– + h+ → X2–) defects have not yet been confirmed in halide perovskite semiconductors. The I2– split-interstitial defect is predicted to be a spin radical in CH3NH3PbI3 with an optically excited state in the semiconductor band gap.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Solid-state spectroscopy and crystallography · Optical properties and cooling technologies in crystalline materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Thomas Young Centre and Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, U.K.
School of Biological and Chemical Sciences, Queen Mary University of London, London E1 4NS, U.K.
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea
Funding
Engineering and Physical Sciences Research Council · Royal Society
References (13)
Show source-provided references
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