Molecular Recombination Junction for Vacuum-Deposited Perovskite/Silicon Two-Terminal Tandem Solar Cells
Source abstract
Abstract
The use of commercial, Czochralski-grown silicon wafers as bottom cells in two-terminal perovskite/silicon tandem configurations often leads to defects in the top perovskite absorber due to their rough surfaces, featuring μm-sized pyramids and saw damages. Most recombination junctions in two-terminal tandem cells employ high conductive indium tin oxide which increases the effect of local shunts in the top cell by connecting them. We use Suns– V OC with selective illumination and external quantum efficiency measurements to identify these shunts. Additionally, we show that a molecular recombination junction composed of an n-doped C 60 layer and a p-doped conjugated arylamine layer alleviates the effect of the shunts in the top cell, which we attribute to the lower lateral conductivity of the organic layers. This enables us to prepare two-terminal tandem devices using fully evaporated top cells on Czochralski textured silicon heterojunction cells with V OC s of up to 1.84 V and efficiencies above 22%.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Silicon and Solar Cell Technologies · solar cell performance optimization
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Instituto de Ciencia Molecular, Universidad de Valencia, Calle Catedratico Jose Beltran 2, 46980 Paterna, Spain
Université Grenoble Alpes, CEA, Liten, Campus Ines, 50 avenue du Lac Léman, F-73375 Le Bourget-du-Lac, France
Funding
Generalitat Valenciana · Ministerio de Ciencia, Innovaci?n y Universidades · European Commission · European Regional Development Fund · European Climate, Infrastructure and Environment Executive Agency · European Social Fund Plus · HORIZON EUROPE Climate, Energy and Mobility
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