DataVXACS Energy LettersPaper
journal article·2024-06-14Open access

Strain Heterogeneity and Extended Defects in Halide Perovskite Devices

Kieran W. P. Orr, Jiecheng Diao, Krishanu Dey, Madsar Hameed, Miloš Dubajić, Hayley L. Gilbert, Thomas A. Selby, Szymon J. Zelewski, Yutong Han, Melissa R. Fitzsimmons, Bart Roose, Peng Li, Jiadong Fan, Huaidong Jiang, Joe Briscoe, Ian K. Robinson, Samuel D. Stranks

ACS Energy Letters· Volume 9· Issue 6
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Source abstract

Abstract

High Resolution Image Download MS PowerPoint Slide Strain is an important property in halide perovskite semiconductors used for optoelectronic applications because of its ability to influence device efficiency and stability. However, descriptions of strain in these materials are generally limited to bulk averages of bare films, which miss important property-determining heterogeneities that occur on the nanoscale and at interfaces in multilayer device stacks. Here, we present three-dimensional nanoscale strain mapping using Bragg coherent diffraction imaging of individual grains in Cs 0.1 FA 0.9 Pb(I 0.95 Br 0.05 ) 3 and Cs 0.15 FA 0.85 SnI 3 (FA = formamidinium) halide perovskite absorbers buried in full solar cell devices. We discover large local strains and striking intragrain and grain-to-grain strain heterogeneity, identifying distinct islands of tensile and compressive strain inside grains. Additionally, we directly image dislocations with surprising regularity in Cs 0.15 FA 0.85 SnI 3 grains and find evidence for dislocation-induced antiphase boundary formation. Our results shine a rare light on the nanoscale strains in these materials in their technologically relevant device setting.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: Advanced X-ray Imaging Techniques · High-pressure geophysics and materials · Photorefractive and Nonlinear Optics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.

Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.

Center for Transformative Science, ShanghaiTech University, Shanghai 201210, China

School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS, U.K.

Diamond Light Source, Harwell Science and Innovation Campus, Fermi Avenue, Didcot OX11 0DE, U.K.

London Centre for Nanotechnology, University College London, London WC1E 6BT, U.K.

Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11793, United States

Funding

Narodowa Agencja Wymiany Akademickiej · National Key Research and Development Program of China · Tata Sons · Diamond Light Source · Cambridge Philosophical Society · National Natural Science Foundation of China · Engineering and Physical Sciences Research Council · Royal Society · UK Research and Innovation · Leverhulme Trust · Basic Energy Sciences · H2020 Marie Sklodowska-Curie Actions · Higher Education Commission, Pakistan · Cambridge Trust · H2020 European Research Council

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