Transport and Interfacial Injection of d-Band Hot Holes Control Plasmonic Chemistry
Source abstract
Abstract
High Resolution Image Download MS PowerPoint Slide Harnessing nonequilibrium hot carriers from plasmonic metal nanostructures constitutes a vibrant research field with the potential to control photochemical reactions, particularly for solar fuel generation. However, a comprehensive understanding of the interplay of plasmonic hot-carrier-driven processes in metal/semiconducting heterostructures has remained elusive. In this work, we reveal the complex interdependence among plasmon excitation, hot-carrier generation, transport, and interfacial collection in plasmonic photocatalytic devices, uniquely determining the charge injection efficiency at the solid/liquid interface. Measuring the internal quantum efficiency of ultrathin (14–33 nm) single-crystalline plasmonic gold (Au) nanoantenna arrays on titanium dioxide substrates, we find that the performance of the device is limited by hot hole collection at the metal/electrolyte interface. Our solid- and liquid-state experimental approach, combined with ab initio simulations, demonstrates more efficient collection of high-energy d-band holes traveling in the [111] orientation, enhancing oxidation reactions on {111} surfaces. These findings establish new guidelines for optimizing plasmonic photocatalytic systems and optoelectronic devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Gold and Silver Nanoparticles Synthesis and Applications · Plasmonic and Surface Plasmon Research · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratory of Nanoscience for Energy Technologies (LNET), STI, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
Department of Materials Science & Engineering, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, New York 12180, United States
Funding
Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung
References (43)
Show source-provided references
1. 10.1038/s41467-018-05968-x10.1038/s41467-018-05968-x ↗
2. 10.1021/acsnano.0c0071310.1021/acsnano.0c00713 ↗
3. 10.1126/science.120305610.1126/science.1203056 ↗
4. 10.1038/s43246-021-00220-410.1038/s43246-021-00220-4 ↗
5. 10.1021/acsnano.0c0877310.1021/acsnano.0c08773 ↗
6. 10.1515/nanoph-2023-014910.1515/nanoph-2023-0149 ↗
7. 10.1021/acs.nanolett.8b0024110.1021/acs.nanolett.8b00241 ↗
8. 10.1021/acs.jpclett.6b0188410.1021/acs.jpclett.6b01884 ↗
9. 10.1021/acs.nanolett.7b0236610.1021/acs.nanolett.7b02366 ↗
10. 10.1063/1.487004010.1063/1.4870040 ↗
11. 10.1021/jp409586z10.1021/jp409586z ↗
12. 10.1021/acs.jpclett.7b0056310.1021/acs.jpclett.7b00563 ↗
13. 10.1021/acscentsci.7b0012210.1021/acscentsci.7b00122 ↗
14. 10.1021/acsnano.9b0021910.1021/acsnano.9b00219 ↗
15. 10.1038/nnano.2013.1810.1038/nnano.2013.18 ↗
16. 10.1021/acs.nanolett.8b0495010.1021/acs.nanolett.8b04950 ↗
17. 10.1021/ja108989b10.1021/ja108989b ↗
18. 10.1021/ja312236y10.1021/ja312236y ↗
19. 10.1021/acs.nanolett.3c0021910.1021/acs.nanolett.3c00219 ↗
20. 10.1021/acsnano.5b0619910.1021/acsnano.5b06199 ↗
21. 10.1021/acs.chemmater.1c0390810.1021/acs.chemmater.1c03908 ↗
22. 10.1038/ncomms114310.1038/ncomms1143 ↗
23. 10.1364/OME.7.00115710.1364/OME.7.001157 ↗
24. 10.1039/C5NR04439A10.1039/C5NR04439A ↗
25. 10.1038/s41467-019-09594-z10.1038/s41467-019-09594-z ↗
26. 10.1002/anie.20150890810.1002/anie.201508908 ↗
27. 10.1038/s41929-019-0269-810.1038/s41929-019-0269-8 ↗
28. 10.1038/ncomms804410.1038/ncomms8044 ↗
29. 10.1063/1.35630610.1063/1.356306 ↗
30. 10.1021/ed200604m10.1021/ed200604m ↗
31. 10.1002/advs.20200114810.1002/advs.202001148 ↗
32. 10.1021/ja711088j10.1021/ja711088j ↗
33. 10.1021/jacs.7b0870210.1021/jacs.7b08702 ↗
34. 10.1021/jacs.3c0066310.1021/jacs.3c00663 ↗
35. Bard A. J. · 201210.1201/b11850 ↗
36. 10.1021/acsnano.3c0100910.1021/acsnano.3c01009 ↗
37. 10.1021/acs.jpcc.7b1208010.1021/acs.jpcc.7b12080 ↗
38. 10.1039/C8FD00057C10.1039/C8FD00057C ↗
39. 10.1021/acs.jpcc.2c0589310.1021/acs.jpcc.2c05893 ↗
40. 10.1021/ja410994f10.1021/ja410994f ↗
41. Simon, M. S., Yiming, L., Kwok, K. N. Physics of Semiconductor Devices, 3rd ed. Wiley: 2007; pp 134–196.
42. 10.1103/PhysRevMaterials.3.07520110.1103/PhysRevMaterials.3.075201 ↗
43. 10.1021/cr050168910.1021/cr0501689 ↗