journal article·2023-10-13Open access

Transport and Interfacial Injection of d-Band Hot Holes Control Plasmonic Chemistry

Fatemeh Kiani, Alan R. Bowman, Milad Sabzehparvar, Can O. Karaman, Ravishankar Sundararaman, Giulia Tagliabue

ACS Energy Letters· Volume 8· Issue 10

Abstract

High Resolution Image Download MS PowerPoint Slide Harnessing nonequilibrium hot carriers from plasmonic metal nanostructures constitutes a vibrant research field with the potential to control photochemical reactions, particularly for solar fuel generation. However, a comprehensive understanding of the interplay of plasmonic hot-carrier-driven processes in metal/semiconducting heterostructures has remained elusive. In this work, we reveal the complex interdependence among plasmon excitation, hot-carrier generation, transport, and interfacial collection in plasmonic photocatalytic devices, uniquely determining the charge injection efficiency at the solid/liquid interface. Measuring the internal quantum efficiency of ultrathin (14–33 nm) single-crystalline plasmonic gold (Au) nanoantenna arrays on titanium dioxide substrates, we find that the performance of the device is limited by hot hole collection at the metal/electrolyte interface. Our solid- and liquid-state experimental approach, combined with ab initio simulations, demonstrates more efficient collection of high-energy d-band holes traveling in the [111] orientation, enhancing oxidation reactions on {111} surfaces. These findings establish new guidelines for optimizing plasmonic photocatalytic systems and optoelectronic devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Gold and Silver Nanoparticles Synthesis and Applications · Plasmonic and Surface Plasmon Research · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Laboratory of Nanoscience for Energy Technologies (LNET), STI, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

Department of Materials Science & Engineering, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, New York 12180, United States

Funding

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

References (43)

Show source-provided references
1. 10.1038/s41467-018-05968-x10.1038/s41467-018-05968-x ↗
2. 10.1021/acsnano.0c0071310.1021/acsnano.0c00713 ↗
3. 10.1126/science.120305610.1126/science.1203056 ↗
4. 10.1038/s43246-021-00220-410.1038/s43246-021-00220-4 ↗
5. 10.1021/acsnano.0c0877310.1021/acsnano.0c08773 ↗
6. 10.1515/nanoph-2023-014910.1515/nanoph-2023-0149 ↗
7. 10.1021/acs.nanolett.8b0024110.1021/acs.nanolett.8b00241 ↗
8. 10.1021/acs.jpclett.6b0188410.1021/acs.jpclett.6b01884 ↗
9. 10.1021/acs.nanolett.7b0236610.1021/acs.nanolett.7b02366 ↗
10. 10.1063/1.487004010.1063/1.4870040 ↗
11. 10.1021/jp409586z10.1021/jp409586z ↗
12. 10.1021/acs.jpclett.7b0056310.1021/acs.jpclett.7b00563 ↗
13. 10.1021/acscentsci.7b0012210.1021/acscentsci.7b00122 ↗
14. 10.1021/acsnano.9b0021910.1021/acsnano.9b00219 ↗
15. 10.1038/nnano.2013.1810.1038/nnano.2013.18 ↗
16. 10.1021/acs.nanolett.8b0495010.1021/acs.nanolett.8b04950 ↗
17. 10.1021/ja108989b10.1021/ja108989b ↗
18. 10.1021/ja312236y10.1021/ja312236y ↗
19. 10.1021/acs.nanolett.3c0021910.1021/acs.nanolett.3c00219 ↗
20. 10.1021/acsnano.5b0619910.1021/acsnano.5b06199 ↗
21. 10.1021/acs.chemmater.1c0390810.1021/acs.chemmater.1c03908 ↗
22. 10.1038/ncomms114310.1038/ncomms1143 ↗
23. 10.1364/OME.7.00115710.1364/OME.7.001157 ↗
24. 10.1039/C5NR04439A10.1039/C5NR04439A ↗
25. 10.1038/s41467-019-09594-z10.1038/s41467-019-09594-z ↗
26. 10.1002/anie.20150890810.1002/anie.201508908 ↗
27. 10.1038/s41929-019-0269-810.1038/s41929-019-0269-8 ↗
28. 10.1038/ncomms804410.1038/ncomms8044 ↗
29. 10.1063/1.35630610.1063/1.356306 ↗
30. 10.1021/ed200604m10.1021/ed200604m ↗
31. 10.1002/advs.20200114810.1002/advs.202001148 ↗
32. 10.1021/ja711088j10.1021/ja711088j ↗
33. 10.1021/jacs.7b0870210.1021/jacs.7b08702 ↗
34. 10.1021/jacs.3c0066310.1021/jacs.3c00663 ↗
35. Bard A. J. · 201210.1201/b11850 ↗
36. 10.1021/acsnano.3c0100910.1021/acsnano.3c01009 ↗
37. 10.1021/acs.jpcc.7b1208010.1021/acs.jpcc.7b12080 ↗
38. 10.1039/C8FD00057C10.1039/C8FD00057C ↗
39. 10.1021/acs.jpcc.2c0589310.1021/acs.jpcc.2c05893 ↗
40. 10.1021/ja410994f10.1021/ja410994f ↗
41. Simon, M. S., Yiming, L., Kwok, K. N. Physics of Semiconductor Devices, 3rd ed. Wiley: 2007; pp 134–196.
42. 10.1103/PhysRevMaterials.3.07520110.1103/PhysRevMaterials.3.075201 ↗
43. 10.1021/cr050168910.1021/cr0501689 ↗