journal article·2022-10-14Open access

Full-Space Potential Gradient Driven Charge Migration inside BiFeO3 Photocathode

Bing Tan, Abdul M. Reyes, Eduardo Menéndez-Proupin, Sebastian E. Reyes-Lillo, Yanbo Li, Zemin Zhang

ACS Energy Letters· Volume 7· Issue 10

Abstract

Solar–fuel conversion depends on effective collection of photocarriers in the photoelectrode. In practice, however, considerable photocarriers are lost in the bulk through recombination due to the absence of a driving force. To overcome this, herein, a full-space electric field is induced in BiFeO3 photocathodes by building a gradient homojunction through Fermi level engineering. As expected, the BiFeO3 photocathodes with forward electric field show significantly enhanced performance: a state-of-the-art photocurrent of −1.02 mA·cm–2 at 0.5 V vs RHE and H2O2 production of 380 mmol·(L·m2)−1 within 50 min. First-principles calculations and experimental analysis suggest that the Bi vacancies as shallow acceptors can significantly modulate the Fermi level of BiFeO3. The resulting internal electric field serves as an additional driving force to promote charge collection. This work provides an approach to induce a full-space electric field in semiconductor films through gradient defects modulation, which can be broadly applied to other optoelectronic systems.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Transition Metal Oxide Nanomaterials · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

Departamento de Ciencias Físicas, Universidad Andres Bello, Santiago 837-0136, Chile

Centro de Excelencia en Nuevos Materiales (CENM) y Departamento de Física, Grupo de Óptica Cuántica, Universidad del Valle, A.A. 25360 Santiago de Cali, Colombia

Departamento de Física Aplicada I, Escuela Politécnica Superior, Universidad de Sevilla, Seville E-41011, Spain

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China

Funding

Key Science and Technology Foundation of Gansu Province · Universidad del Valle · Lanzhou University · Fondo Nacional de Desarrollo Cient?fico y Tecnol?gico

References (47)

Show source-provided references
1. 10.1002/adfm.20191053910.1002/adfm.201910539 ↗
2. 10.1038/s41467-022-28686-x10.1038/s41467-022-28686-x ↗
3. 10.1021/acsenergylett.9b0219910.1021/acsenergylett.9b02199 ↗
4. 10.1021/acsenergylett.1c0075810.1021/acsenergylett.1c00758 ↗
5. 10.1039/D0EE02397C10.1039/D0EE02397C ↗
6. 10.1149/1945-7111/ac63f710.1149/1945-7111/ac63f7 ↗
7. 10.1039/D1EE01772A10.1039/D1EE01772A ↗
8. 10.1021/acsenergylett.1c0183110.1021/acsenergylett.1c01831 ↗
9. 10.1039/C7EE03486E10.1039/C7EE03486E ↗
10. 10.1021/acsenergylett.1c0222010.1021/acsenergylett.1c02220 ↗
11. 10.1063/5.008079410.1063/5.0080794 ↗
12. 10.1103/PhysRevLett.126.17640110.1103/PhysRevLett.126.176401 ↗
13. 10.1002/adfm.20200094810.1002/adfm.202000948 ↗
14. 10.1021/acsaem.9b0029710.1021/acsaem.9b00297 ↗
15. 10.1039/D2MH00201A10.1039/D2MH00201A ↗
16. 10.1039/D2TA00476C10.1039/D2TA00476C ↗
17. 10.1038/ncomms240110.1038/ncomms2401 ↗
18. 10.1016/j.apcatb.2021.12098010.1016/j.apcatb.2021.120980 ↗
19. 10.1002/adom.20220004610.1002/adom.202200046 ↗
20. 10.1002/adfm.20211118010.1002/adfm.202111180 ↗
21. 10.1038/s41467-018-06369-w10.1038/s41467-018-06369-w ↗
22. 10.1002/sia.494810.1002/sia.4948 ↗
23. 10.1038/s41467-020-18484-810.1038/s41467-020-18484-8 ↗
24. 10.1016/j.cej.2021.13050710.1016/j.cej.2021.130507 ↗
25. 10.1021/jacs.7b0784710.1021/jacs.7b07847 ↗
26. 10.1038/s41929-020-00522-910.1038/s41929-020-00522-9 ↗
27. 10.1103/PhysRevB.85.10440910.1103/PhysRevB.85.104409 ↗
28. 10.1103/PhysRevB.93.17410710.1103/PhysRevB.93.174107 ↗
29. 10.1016/j.cplett.2013.04.02410.1016/j.cplett.2013.04.024 ↗
30. 10.1103/PhysRevB.99.02410410.1103/PhysRevB.99.024104 ↗
31. 10.1103/PhysRevB.101.01411010.1103/PhysRevB.101.014110 ↗
32. 10.1021/acs.chemmater.1c0244410.1021/acs.chemmater.1c02444 ↗
33. 10.1088/0268-1242/31/8/08300210.1088/0268-1242/31/8/083002 ↗
34. 10.1063/1.355268210.1063/1.3552682 ↗
35. 10.1021/acsami.9b0670410.1021/acsami.9b06704 ↗
36. 10.1016/j.apcatb.2018.08.03110.1016/j.apcatb.2018.08.031 ↗
37. 10.1021/acs.nanolett.1c0442010.1021/acs.nanolett.1c04420 ↗
38. 10.1002/adfm.20200429310.1002/adfm.202004293 ↗
39. 10.1002/adfm.20210231510.1002/adfm.202102315 ↗
40. 10.1002/adma.20210736410.1002/adma.202107364 ↗
41. 10.1021/acs.nanolett.1c0225710.1021/acs.nanolett.1c02257 ↗
42. 10.1103/PhysRevB.66.16521710.1103/PhysRevB.66.165217 ↗
43. 10.1063/1.174885610.1063/1.1748856 ↗
44. 10.1021/acs.jpcc.8b0664510.1021/acs.jpcc.8b06645 ↗
45. 10.1021/acs.jpcc.0c0871610.1021/acs.jpcc.0c08716 ↗
46. 10.1063/1.494321110.1063/1.4943211 ↗
47. 10.1021/acsphotonics.6b0071710.1021/acsphotonics.6b00717 ↗