Realizing High-Detectivity Near-Infrared Photodetectors in Tin–Lead Perovskites by Double-Sided Surface-Preferred Distribution of Multifunctional Tin Thiocyanate Additive
Source abstract
Abstract
Tin–lead perovskite photodetectors are attractive alternatives to silicon counterparts for near-infrared photodetection, due to their outstanding optoelectronic properties, solution processability, and flexible compatibility. However, uncontrollable crystallization and easy oxidation problems of tin-containing perovskites severely hinder advances in their perfomance. Herein, we develop a high-detectivity near-infrared photodetector using a tailored tin-lead perovskite structure. Notably, we employ tin thiocyanate to form a double-sided surface-preferred distribution in tin-lead perovskites, in which the majority is located at bottom and top surfaces, and the tiny minority positioned inside the films. The tailored perovskite structure with the unique additive distribution significantly improves the film morphology and antioxidation ability. Finally, self-powered tin-lead perovskite photodetectors achieve a peak responsivity of 0.57 A W–1, a detectivity of 8.48 × 1012 Jones at 910 nm, and a large linear dynamic range of 213 dB, accompanied by an outstanding lifetime of 2300 h. This work opens up a new avenue to developing high-performance near-infrared photodetectors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong SAR 999077, People’s Republic of China
Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai 519082, People’s Republic of China
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, People’s Republic of China
Department of Physics and William Mong Institute of Nano, Science and Technology, The Hong Kong University of Science and Technology, Hong Kong SAR 999077, People’s Republic of China
Funding
Ministry of Education of the People's Republic of China · University of Hong Kong · Guangzhou Science and Technology Program key projects · Guangdong Basic and Applied Basic Research Foundation · General Research Fund · Collaborative Research Fund from Hong Kong Special Administrative Region
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