Suppressing the Trapping Process by Interfacial Charge Extraction in Antimony Selenide Heterojunctions
Abstract
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Perovskite Materials and Applications
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Affiliations
State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
School of Physical Science and Technology, ShanghaiTech University, 100 Haike Road, Shanghai 201210, China
Funding
China Postdoctoral Science Foundation · National Natural Science Foundation of China · Department of S and T for Social Development · Chinese Academy of Sciences · Program of Shanghai Academic/Technology Research Leader