Control Over Ligand Exchange Reactivity in Hole Transport Layer Enables High-Efficiency Colloidal Quantum Dot Solar Cells
Source abstract
Abstract
Colloidal quantum dot (CQD) solar cells are solution-processed photovoltaic devices that exhibit promise in harvesting the infrared solar spectrum. Solid-state ligand exchange is the method employed to fabricate the CQD hole transport layer (HTL) in these cells: insulating oleic acid ligands are substituted with short thiol ligands (1,2-ethanedithiol) to create conductive p-type CQD solids. Thiols’ high reactivity with the CQD surface results in rapid exchange, giving rise to aggregates of dots and unpassivated sites on dots, each contributing to sub-bandgap trap states. Here we report a strategy to minimize trap states in the CQD HTL by controlling the solvent type in the exchange. By employing a less volatile solvent, we achieve a slower reaction, leading to increased order and a 2 times reduced trap density in CQD solids. These improvements enable a power conversion efficiency of 13.1 ± 0.1% in CQD solar cells compared to control devices showing 12.4 ± 0.1%.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering, University of Toronto, 10 King’s College Road, Toronto, Ontario M5S 3G4, Canada
Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899 United States
Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, ON M5S 3E4, Canada
Funding
Ontario Research Foundation · Natural Sciences and Engineering Research Council of Canada · QD Solar
References (53)
Show source-provided references
1. 10.1002/adma.20030539510.1002/adma.200305395 ↗
2. 10.1021/nn103050w10.1021/nn103050w ↗
3. 10.1021/nn506223h10.1021/nn506223h ↗
4. 10.1021/ja400948t10.1021/ja400948t ↗
5. 10.1002/adma.20140247110.1002/adma.201402471 ↗
6. 10.1088/2053-1583/2/3/03501110.1088/2053-1583/2/3/035011 ↗
7. 10.1021/acsphotonics.7b0121110.1021/acsphotonics.7b01211 ↗
8. 10.1016/j.physrep.2019.12.00610.1016/j.physrep.2019.12.006 ↗
9. 10.1002/adma.20190235210.1002/adma.201902352 ↗
10. 10.1038/nmat506310.1038/nmat5063 ↗
11. 10.1038/s41467-018-07255-110.1038/s41467-018-07255-1 ↗
12. 10.1038/natrevmats.2018.1710.1038/natrevmats.2018.17 ↗
13. 10.1038/s41566-019-0526-z10.1038/s41566-019-0526-z ↗
14. 10.1002/adfm.20190648310.1002/adfm.201906483 ↗
15. 10.1021/acsnano.5b0699410.1021/acsnano.5b06994 ↗
16. 10.1038/nnano.2008.31310.1038/nnano.2008.313 ↗
17. 10.1021/acsphotonics.6b0021110.1021/acsphotonics.6b00211 ↗
18. 10.1038/s41467-019-13437-210.1038/s41467-019-13437-2 ↗
19. 10.1002/adma.20160575610.1002/adma.201605756 ↗
20. 10.1021/acsenergylett.7b0024410.1021/acsenergylett.7b00244 ↗
21. 10.1021/acsenergylett.9b0230110.1021/acsenergylett.9b02301 ↗
22. 10.1021/acsenergylett.8b0020710.1021/acsenergylett.8b00207 ↗
23. 10.1038/s41467-020-15077-310.1038/s41467-020-15077-3 ↗
24. 10.1002/adma.20197022510.1002/adma.201970225 ↗
25. 10.1002/aenm.20170080910.1002/aenm.201700809 ↗
26. 10.1021/acsnano.7b0433210.1021/acsnano.7b04332 ↗
27. 10.1002/adma.20170757210.1002/adma.201707572 ↗
28. 10.1021/nn100339b10.1021/nn100339b ↗
29. 10.1021/acsanm.8b0120510.1021/acsanm.8b01205 ↗
30. 10.1021/acsaem.0c0038910.1021/acsaem.0c00389 ↗
31. 10.1002/adma.20140057710.1002/adma.201400577 ↗
32. 10.1021/nn100335g10.1021/nn100335g ↗
33. 10.1038/nnano.2012.12710.1038/nnano.2012.127 ↗
34. 10.1002/adma.20120504110.1002/adma.201205041 ↗
35. 10.1021/jp403066q10.1021/jp403066q ↗
36. 10.1039/C8EE00278A10.1039/C8EE00278A ↗
37. 10.1038/s41467-020-18655-710.1038/s41467-020-18655-7 ↗
38. 10.1021/nn700334810.1021/nn7003348 ↗
39. 10.1103/PhysRevLett.57.177710.1103/PhysRevLett.57.1777 ↗
40. 10.1016/j.matt.2019.05.01510.1016/j.matt.2019.05.015 ↗
41. 10.1021/acs.nanolett.0c0063810.1021/acs.nanolett.0c00638 ↗
42. 10.1103/PhysRevLett.110.19680210.1103/PhysRevLett.110.196802 ↗
43. 10.1038/nmat480010.1038/nmat4800 ↗
44. 10.1002/adma.20190619910.1002/adma.201906199 ↗
45. 10.1021/jp046804910.1021/jp0468049 ↗
46. 10.1021/nl401758g10.1021/nl401758g ↗
47. 10.1002/smll.20170059810.1002/smll.201700598 ↗
48. 10.1002/aenm.20170204910.1002/aenm.201702049 ↗
49. 10.1021/acs.nanolett.5b0051310.1021/acs.nanolett.5b00513 ↗
50. 10.1002/adma.20150387910.1002/adma.201503879 ↗
51. 10.1021/acs.jpcc.8b0192110.1021/acs.jpcc.8b01921 ↗
52. 10.1126/sciadv.aao420410.1126/sciadv.aao4204 ↗
53. 10.1038/nnano.2011.15910.1038/nnano.2011.159 ↗