journal article·2017-05-12

Photovoltage Behavior in Perovskite Solar Cells under Light-Soaking Showing Photoinduced Interfacial Changes

Jiangang Hu, Ronen Gottesman, Laxman Gouda, Adi Kama, Maayan Priel, Shay Tirosh, Juan Bisquert, Arie Zaban

ACS Energy Letters· Volume 2· Issue 5
Publisher page

Abstract

The photovoltage of perovskite solar cells (PSCs) was studied over a wide range of light intensities, showing changes from pristine to light-soaking (LS) conditions, explained using a specific model of spatial charge distribution. Migration of ions and vacancies under photovoltage conditions results in localized charge redistribution manifested as positive charge accumulation at the TiO 2 or TiO 2 –MgO interlayer–perovskite interface, signifying photoinduced interfacial upward band bending. Consequentially, generation of an electrostatic potential ( V elec ) and an increase in interfacial recombination rate are confirmed. The magnitude and effect of V elec and interfacial recombination on the photovoltage depend on the illumination intensity and on the LS duration. PSCs with mesoporous Al 2 O 3 showed similar changes, validating the role of the compact TiO 2 . Faster generation and a gradual increase of V elec are apparent under LS, which expresses the constant migration of ions and vacancies toward the interface. The nonrigid TiO 2 –perovskite interface calls for a vital perspective change of PSCs.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry, Center for Nanotechnology & Advanced Materials, Bar-Ilan University, Ramat Gan 52900, Israel

Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain

Funding

Generalitat Valenciana · Ministerio de Economía y Competitividad

References (33)

Show source-provided references
1. 10.1016/j.nantod.2015.04.00910.1016/j.nantod.2015.04.009 ↗
2. 10.1002/aenm.20150027910.1002/aenm.201500279 ↗
3. 10.1039/C6EE03352K10.1039/C6EE03352K ↗
4. 10.1021/acs.accounts.5b0044610.1021/acs.accounts.5b00446 ↗
5. 10.1021/acs.jpclett.6b0096310.1021/acs.jpclett.6b00963 ↗
6. 10.1038/nmat415010.1038/nmat4150 ↗
7. 10.1021/acs.jpclett.6b0117610.1021/acs.jpclett.6b01176 ↗
8. 10.1002/aenm.20160033010.1002/aenm.201600330 ↗
9. 10.1021/acsami.5b1237610.1021/acsami.5b12376 ↗
10. 10.1002/adma.20150383210.1002/adma.201503832 ↗
11. 10.1002/adfm.20160223110.1002/adfm.201602231 ↗
12. 10.1021/acsami.6b0410410.1021/acsami.6b04104 ↗
13. 10.1002/aenm.20150199410.1002/aenm.201501994 ↗
14. 10.1002/aenm.20150082910.1002/aenm.201500829 ↗
15. 10.1021/nn505723h10.1021/nn505723h ↗
16. 10.1021/acs.jpclett.5b0281010.1021/acs.jpclett.5b02810 ↗
17. 10.1016/j.chempr.2016.10.00210.1016/j.chempr.2016.10.002 ↗
18. 10.1021/acs.jpcc.6b0423310.1021/acs.jpcc.6b04233 ↗
19. 10.1039/C5CP00416K10.1039/C5CP00416K ↗
20. 10.1038/ncomms1383110.1038/ncomms13831 ↗
21. 10.1021/acsphotonics.5b0074610.1021/acsphotonics.5b00746 ↗
22. 10.1021/jz401549e10.1021/jz401549e ↗
23. 10.1021/acs.jpclett.5b0201410.1021/acs.jpclett.5b02014 ↗
24. 10.1002/aenm.20160039610.1002/aenm.201600396 ↗
25. 10.1039/C5NR08658B10.1039/C5NR08658B ↗
26. 10.1039/C6TA05869H10.1039/C6TA05869H ↗
27. 10.1039/C4EE03171G10.1039/C4EE03171G ↗
28. 10.1021/acs.jpclett.5b0099410.1021/acs.jpclett.5b00994 ↗
29. 10.1021/jp051515l10.1021/jp051515l ↗
30. 10.1039/C6EE01337F10.1039/C6EE01337F ↗
31. 10.1016/j.solmat.2016.09.01210.1016/j.solmat.2016.09.012 ↗
32. 10.1039/c3cp44719g10.1039/c3cp44719g ↗
33. 10.1021/jz501373f10.1021/jz501373f ↗