Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI₂Br for Stable All-Inorganic Perovskite Solar Cells

Sawanta S. Mali; Jyoti V. Patil; Julian A. Steele; Sachin R. Rondiya; Nelson Y. Dzade; Chang Kook Hong

doi:10.1021/acsenergylett.0c02385

journal article·2021-02-12Open access

Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI₂Br for Stable All-Inorganic Perovskite Solar Cells

Sawanta S. Mali, Jyoti V. Patil, Julian A. Steele, Sachin R. Rondiya, Nelson Y. Dzade, Chang Kook Hong

ACS Energy Letters· Volume 6· Issue 2

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Source abstract

Abstract

Br films and applied dopant-free copper(I) thiocyanate (CuSCN) and poly(3-hexylthiophene) (P3HT)-based materials as low-cost hole transporting layers, leading to record-high power conversion efficiencies of 15.27% and 15.69%, respectively, and a retention of >95% of the initial efficiency over 1600 h at 85 °C thermal stress.

Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Polymer Energy Materials Laboratory, School of Advanced Chemical Engineering, Chonnam National University, Gwangju, South Korea, 61186

Optoelectronic Convergence Research Center (OCRC), Chonnam National University, Gwangju, South Korea, 61186

cMACS, Department of Microbial and Molecular Systems, KU Leuven, 3001 Leuven, Belgium

School of Chemistry, Cardiff University, Main Building, Park Place, Cardiff CF10 3AT, Wales, United Kingdom

Funding

National Research Foundation of Korea (NRF)

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