Trap-Mediated Two-Step Sensitization of Manganese Dopants in Perovskite Nanocrystals
Source abstract
Abstract
Halide perovskite nanocrystals hold promise for printable optoelectronic and photonic applications. Doping enhances their functionalities and is being investigated for substituting lead with environmentally friendlier elements. The most investigated dopant is Mn 2+ that acts as a color center sensitized by the host excitons. The sensitization mechanism is far from understood and no comprehensive picture of the energy-transfer process has been proposed. Similarly, the role of shallow states, particularly abundant in defect tolerant materials, is still unknown. Here, we address this problem via spectroscopic studies at controlled excitation density and temperature on Mn:CsPbCl 3 nanocrystals. Our results indicate a two-step process involving exciton localization in a shallow metastable state that mediates the thermally assisted sensitization of the Mn 2+ emission, which is completely quenched for T < 200 K. At T ≤ 60 K, however, such emission surprisingly reappears, suggesting direct energy transfer from band-edge states. Electron spin resonance supports this picture, revealing the signatures of conformational rearrangements below 70 K, possibly removing the potential barrier for sensitization. Our results demystify anomalous behaviors of the exciton-to-Mn 2+ energy-transfer mechanism and highlight the role of shallow defects in the photophysics of doped perovskite nanostructures
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, via R. Cozzi 55, IT-20125 Milano, Italy
Dipartimento di Chimica e Chimica Industriale, Università degli Studi di Genova, via Dodecaneso 31, IT-16146 Genova, Italy
Istituto Italiano di Tecnologia, via Morego 30, IT-16163 Genova, Italy
Funding
FP7 Ideas: European Research Council
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