Minimal Effect of the Hole-Transport Material Ionization Potential on the Open-Circuit Voltage of Perovskite Solar Cells
Source abstract
Abstract
Hole-transport material optimization is an important step toward maximizing the efficiency of perovskite solar cells. Here, we investigate the role of one hole-transport material property, the ionization potential, on the performance of perovskite solar cells. We employ a device architecture that allows us to systematically tune the ionization potential while avoiding any impact to other device parameters, and we find that for a wide range of ionization potentials the photovoltaic performance is minimally affected. This finding relaxes the requirement for the development of hole-transport materials with particular ionization potentials, allowing for the optimization of hole-transport materials that can improve performance in differing ways such as through increased stability or decreased parasitic absorption.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Organic Electronics and Photovoltaics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Materials Science & Engineering Department, Stanford University, Stanford, California 94305, United States
Funding
National Renewable Energy Laboratory
References (43)
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