Fractional Order Capacitive Response and Charge Dynamics Behavior in Molybdenum Trioxide ( MoO ₃ )/polyvinylidene Fluoride ( PVDF ) Micro‐Composite Films

ABSTRACT Herein, in this report, fractional order capacitive behavior of polyvinylidene fluoride (PVDF) films incorporated with molybdenum trioxide (MoO ₃ ) micro rods (with an average length of 2.22 μm) has been observed and analyzed in the frequency range of 1 kHz ≤ f ≤ 7 MHz and temperature range of 303 K ≤ T ≤ 423 K. The semiconducting MoO ₃ rods are prepared by the hydrothermal method and introduced into the PVDF matrix, creating a conductivity mismatch between the filler and the matrix. The fabricated fractional order capacitors (FOC) (5 wt% MoO ₃ /PVDF)) show an extensive constant phase zone (CPZ) of 2.2 decades and tunable fractional capacitive behavior over a wide temperature range. The pseudo‐capacitance calculated for the FOC (PM5) at 1 MHz is found to be 1.43 pF.s ^−0.67 . The fractional order exponent varies from 0.97 to 0.33 for the fabricated FOCs with increasing temperature and filler concentration. Based on the analysis of AC conductivity, it has been determined that the charge transport dynamics in these solid‐state fractional order capacitors (SSFOC) follow the correlated barrier hopping model (CBH). The barrier height for charge transport in these FOCs is found to vary from 1.36 to 0.6 eV with varying concentrations of fillers. Consequently, our results indicate that the MoO₃/PVDF micro‐composite films possess prospective applications as solid‐state fractional order elements.