Breakdown field strength and corona resistance of SiTiB/EP nanocomposites

Abstract This paper describes the process of designing and creating SiTiB nanocomposite oxides by utilizing phenyltriethoxysilane (PTES), tributyl borate, and butyl titanate as monomers. The SiTiB/EP nanocomposite was then created using ultrasonic dispersion and thermal curing. Investigation of the effects of different doping levels of SiTiB nanocomposite oxides on the dielectric properties, breakdown strength, corona resistance lifetime, volume resistivity, and electrical aging threshold of nanocomposites. The findings indicate that the introduction of SiTiB nanocomposite oxides in epoxy resins (EPs) does not result in the growth of the dielectric loss of the nanocomposites. With the rise in SiTiB nanocomposite oxide doping, the breakdown strength of SiTiB/EP nanocomposites exhibited a trend of initially augment and then decline, reaching a peak value of 289.2 kV/mm when the doping amount was 6 wt%. The corona‐resistant lifetime of SiTiB/EP nanocomposites exhibited a trend of initially augment and then decline with the rise of SiTiB nanocomposite oxide doping, and the maximum value of corona‐resistant lifetime was 311 min when the doping amount was 6 wt%, which was 5.03 times of the pure EP. The experimental results demonstrate that the incorporation of SiTiB nanocomposite oxides can enhance both the breakdown strength and corona‐resistant lifetime of the nanocomposites, without causing an increase in their dielectric loss. Highlights SiTiB composite oxides were designed and synthesized. Analyzing the properties of SiTiB/EP composites with different doping levels. SiTiB/EP composites have low dielectric loss. SiTiB/EP composites have a longer corona‐resistance lifetime. SiTiB/EP composites have high breakdown field strengths.