Improved field‐induced strains and fatigue endurance of PLZT antiferroelectric thick films by orientation control

Abstract (Pb_0.97L_0.02)(Zr_0.95Ti_0.05)O₃ (PLZT) antiferroelectric thick films with (100) and (110) orientation were fabricated on platinum and LaNiO₃‐buffered silicon substrates through a modified sol–gel process. It was demonstrated that the PLZT thick films with (110) preferred orientation had an enhanced electric‐field‐induced strain, by 77% as compared to the films with (100) orientation. Also, the antiferroelectric–ferroelectric switching field for the PLZT thick films with (110) orientation was 200 kV/cm, which was much lower than that (256 kV/cm) of the (100) oriented films. Moreover, the fatigue behavior of the PLZT thick films on LaNiO₃ electrodes was much better than that of the films on platinum electrodes. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)