Advances in Gate Dielectrics for 2D Electronics

2D materials have attracted significant attention as promising candidates for next‐generation electronic devices due to their atomically thin structure, high mobility, and excellent gate controllability. However, integrating gate dielectrics with 2D materials remains a critical challenge due to the absence of surface dangling bonds, which hinders uniform dielectric deposition and leads to interface‐related issues, such as charge trapping and mobility degradation. This review provides a comprehensive overview of gate dielectric integration strategies for 2D field‐effect transistors (FETs). The key properties required for dielectric materials in 2D devices are first discussed, including high dielectric constant, wide bandgap, and minimal interfacial defects. Dielectric materials are then classified into layered and nonlayered categories, highlighting their advantages and challenges. Furthermore, various dielectric integration techniques, such as atomic layer deposition (ALD), transfer methods, and in situ oxidation, are explored to address the limitations of conventional deposition approaches. Finally, future perspectives on optimizing dielectric materials and integration methods are presented to enable scalable, high‐performance 2D electronics. By overcoming these challenges, 2D material‐based devices can be fully realized for advanced low‐power and high‐speed semiconductor applications.