Electric Field Engineering for High‐Performance Perovskite Photovoltaics

In perovskite solar cells (PSCs), the electric field at the interface plays a significant role in power conversion efficiency (PCE) by influencing charge transport within the device. Understanding the interplay between electric fields and charge carrier dynamics is crucial for optimizing device architecture and enhancing the overall performance of perovskite solar cells. This study explores the significance of interface electric fields to improve device efficiency. Our study reveals that both the direction and magnitude of the electric field at the interfaces are crucial in determining the device's performance. These electric‐field characteristics are strongly influenced by the material properties of the absorber layer, the electron transport layer (ETL), and the hole transport layer (HTL). This study explores emphasizing strategies for improved electric field management at the interfaces. In this study, transitioning the perovskite absorber layer from intrinsic (i‐type) to n‐type and p‐type has shown a significant change in the electric field distribution, consequently affecting device performance. With optimized doping density and electron affinity in the perovskite absorber layer, the enhanced electric field alignment achieved a 27.14% PCE using an n–n–p structure. Furthermore, optimizing the ETL (SnO ₂ ) and HTL (Spiro‐OMeTAD) better aligns the electric fields in the same direction at the interface, increases the open‐circuit voltage ( V _OC ), and reduces recombination, resulting in a peak of 28.31%.