Near-Field Optical Imaging and Spectroscopy of Single GaAs Quantum Wires
Source abstract
Abstract
Low-dimensional semiconductor structures grown by molecular beam epitaxy on a patterned (311)A GaAs substrate are investigated by near-field spectroscopy at a temperature of 10 K. In particular, the two-dimensional potential profiles of quantum wire and coupled wire–dot structures are determined from photoluminescence (PL) measurements with a spatial resolution of 150 nm. Also presented is an optical method for investigating carrier transport in low-dimensional systems involving performing spatially resolved PL excitation measurements on the wire–dot structure.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Near-Field Optical Microscopy · Semiconductor Quantum Structures and Devices · Integrated Circuits and Semiconductor Failure Analysis
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