Defect-Engineered Flexible ZnO Synaptic TFTs for Adaptive Visual Preprocessing and In-Sensor Reservoir Computing
Source abstract
Abstract
Abstract Reliable visual perception under extreme illumination (underexposure/overexposure) and the trade-off between device operation and photoresponse tunability remain challenges for wearable-compatible vision systems. Inspired by the adaptive gain-control mechanism of the vertebrate retina, we report a hardware-algorithm codesign framework based on defect-engineered ZnO synaptic thin-film transistors for in-sensor visual preprocessing and reservoir computing. On flexible polyimide substrates, a low-temperature (150 °C) defect-engineering strategy combining an Al2O3 planarization layer with a controlled air anneal drives the ZnO channel into a partially passivated state, reducing the defect-related O 1s component from 41.37% to 13.09% while retaining trap-related states required for programmable synaptic plasticity. The resulting synaptic TFTs achieve pA-level off-state currents and gate-programmable paired-pulse facilitation tunable from 163% to 112%. Building on this gate-tunable defect-mediated photoresponse, we design a simulated 20 × 20 pixel-level adaptive preprocessing array in which calibration-based dynamic gate-bias control enables physical-layer gain modulation to mitigate overexposure and enhance underexposed signals. This device-assisted physical-layer preprocessing yields a 5.8 dB improvement in peak signal-to-noise ratio and a 0.29 gain in the structural similarity index, restoring downstream machine-vision accuracy by 30.56 percentage points. Furthermore, exploiting the intrinsic fading memory of the defect-engineered ZnO channel, in-sensor physical reservoir computing is realized with a 96.58% recognition accuracy on the MNIST data set. This material-engineered strategy offers a potential pathway toward robust visual perception in unpredictable optical environments for wearable-compatible electronics.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neural Networks and Reservoir Computing · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National University of Defense Technology , , ,
Funding
National Natural Science Foundation of China · National Key Research and Development Program of China · Science and Technology Program of Hunan Province · Innovation Research Foundation of National University of Defense Technology
References (44)
Show source-provided references
1. Near-sensor and in-sensor computing10.1038/s41928-020-00501-9 ↗
2. Optoelectronic resistive random access memory for neuromorphic vision sensors10.1038/s41565-019-0501-3 ↗
3. Bioinspired in-sensor visual adaptation for accurate perception10.1038/s41928-022-00713-1 ↗
4. In-sensor dynamic computing for intelligent machine vision10.1038/s41928-024-01124-0 ↗
5. Nanomaterial-Based Synaptic Optoelectronic Devices for In-Sensor Preprocessing of Image Data10.1021/acsomega.3c00440 ↗
6. Full hardware implementation of neuromorphic visual system based on multimodal optoelectronic resistive memory arrays for versatile image processing10.1038/s41467-023-43944-2 ↗
7. HDR Imaging with Spatially Varying Signal-to-Noise Ratios10.1109/CVPR52729.2023.00554 ↗
8. The Neuronal Organization of the Retina10.1016/j.neuron.2012.10.002 ↗
9. Functional circuitry of visual adaptation in the retina10.1113/jphysiol.2008.156638 ↗
10. The Challenges Natural Images Pose for Visual Adaptation10.1016/j.neuron.2009.11.028 ↗
11. Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor10.1126/sciadv.aba6173 ↗
12. Adaptative machine vision with microsecond-level accurate perception beyond human retina10.1038/s41467-024-50488-6 ↗
13. Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing10.1038/s41563-023-01676-0 ↗
14. Ferroelectric Quantum Dots for Retinomorphic In-Sensor Computing10.1002/adma.202504117 ↗
15. An organic transistor with light intensity-dependent active photoadaptation10.1038/s41928-021-00615-8 ↗
16. Stretchable optoelectronic synapses with ultraviolet to near-infrared perception for retina-inspired computing and vision-adaptive sensing10.1038/s41528-025-00390-y ↗
17. A 60-Frames/s CMOS Image Sensor With Pixelwise Conversion Gain Modulation and Self-Triggered ADCs for Per-Frame Adaptive DCG-HDR Imaging10.1109/JSSC.2024.3433003 ↗
18. IRIS: Integrated Retinal Functionality in Image Sensors10.3389/fnins.2023.1241691 ↗
19. A synaptic device based on the optoelectronic properties of ZnO thin film transistors10.1007/s00339-023-06490-8 ↗
20. Low temperature, highly stable ZnO thin-film transistors10.1016/j.mee.2023.112063 ↗
21. In-Sensor Noise Reduction and Reservoir Computing System Using ZnO Optoelectronic Memristors for Artificial Vision Applications10.1021/acsaelm.4c01682 ↗
22. Zinc oxide thin film transistor with high UV photoelectric sensitivity for artificial neuro networks10.1016/j.jsamd.2024.100689 ↗
23. Fully screen-printed paper-based ZnO synaptic transistor arrays for visual perception and neuromorphic computing10.1038/s41528-025-00425-4 ↗
24. Defect engineering of ZnO: Review on oxygen and zinc vacancies10.1016/j.jeurceramsoc.2021.03.031 ↗
25. Persistent Photoconductivity of Metal Oxide Semiconductors10.1021/acsaelm.3c01549 ↗
26. Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector10.1063/1.4737648 ↗
27. A high-dimensional in-sensor reservoir computing system with optoelectronic memristors for high-performance neuromorphic machine vision10.1039/D3MH01584J ↗
28. Gate-Controlled Three-Terminal ZnO Nanoparticle Optoelectronic Synaptic Devices for In-Sensor Neuromorphic Memory Applications10.3390/nano15120908 ↗
29. Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O210.1109/LED.2014.2365194 ↗
30. Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors10.3390/nano10061186 ↗
31. Interpretation of Oxygen 1s X-ray Photoelectron Spectroscopy of ZnO10.1021/acs.chemmater.3c00801 ↗
32. Recommended strategies for quantifying oxygen vacancies with X-ray photoelectron spectroscopy10.1016/j.jeurceramsoc.2024.116709 ↗
33. A step toward correct interpretation of XPS results in metal oxides: A case study aided by first-principles method in ZnO10.1063/5.0154926 ↗
34. Control of oxygen vacancies in ZnO nanorods by annealing and their influence on ZnO/PEDOT: PSS diode behaviour10.1039/C7TC04284A ↗
35. Persistent photoconductivity in ZnO nanowires: Influence of oxygen and argon ambient10.1063/1.4978911 ↗
36. Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor10.1021/nn202983n ↗
37. A Reconfigurable All-Optical-Controlled Synaptic Device for Neuromorphic Computing Applications10.1021/acsnano.4c02278 ↗
38. Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization10.1063/1.5038800 ↗
39. Image quality assessment: from error visibility to structural similarity10.1109/TIP.2003.819861 ↗
40. Enhanced Retention Characteristics of Subthreshold Hf-ZnO Synaptic Pass-Transistors with Ultralow Power Consumption10.1021/acsami.5c05717 ↗
41. The Role of Edge Detection in Improving Convolutional Neural Network Accuracy and Robustness: An Overview10.1109/ICIC64337.2024.10956558 ↗
42. Physical reservoir computing with emerging electronics10.1038/s41928-024-01133-z ↗
43. Boosting Performance of Ga2O3 Thin-Film Transistors via Defect Passivation toward Solar-Blind Ultraviolet In-Sensor Reservoir Computing10.1021/acsnano.5c18136 ↗
44. Neural networks based on in-sensor computing of optoelectronic memristor10.1016/j.mee.2024.112201 ↗