Origin of ferroelectricity in germanium-based inorganic halide perovskites
Source abstract
Abstract
Compared to π΄β’π΅β’O3 oxide perovskites, intrinsic ferroelectricity is less studied in π΄β’π΅β’π3 (π=Cl, Br, I) halide perovskites. Nonetheless, it presents unique opportunities, such as achieving ferroelectric photovoltaics with band gaps suitable for the solar spectrum. In this work, we focus on the CsGeβ’π3 halide perovskites as prototypes for investigating the origin of their ferroelectricity and its relationship with other properties. We find that the presence of stereochemically lone pairs on the perovskite π΅-site is the primary driving force for ferroelectricity, causing off-center displacements of the Ge ions and enhanced covalency with the halide ligands. This contrasts with the behavior of typical ferroelectric oxide perovskites. Our calculations confirm that halide perovskites are intrinsic modest band gap semiconductors. In particular, CsGeI3 exhibits a very favorable band gap of 1.6 eV for photovoltaic applications. Our findings provide valuable insights into the mechanism underlying high-temperature ferroelectricity in halide perovskites with potential optoelectronic applications.
Source: openalex_inverted_index Β· Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications Β· Solid-state spectroscopy and crystallography Β· Photorefractive and Nonlinear Optics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Shanghai University
UniversitΓ© catholique de Louvain
China Electronic Product Reliability and Environmental Testing Research Institute
Shanghai Jiao Tong University
University of Missouri
Funding
National Natural Science Foundation of China Β· Science and Technology Commission of Shanghai Municipality Β· China Scholarship Council Β· Shanghai Super Postdoctoral Incentive Program
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