journal article·2023-05-25

Ferromagnetism induced by hybridization of Fe 3d orbitals with ligand InSb bands in the n -type ferromagnetic semiconductor (In,Fe)Sb

Ryo Okano, Tomoki Hotta, Takahito Takeda, Kohsei Araki, Kengo Takase, Le Duc Anh, Shoya Sakamoto, Yukiharu Takeda, Atsushi Fujimori, Masaaki Tanaka, Masaki Kobayashi

Physical Review B· Volume 107· Issue 20
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Abstract

The Fe-doped III-V ferromagnetic semiconductor (FMS) (In,Fe)Sb is a promising material for spintronic device applications because of the $n$-type carrier conduction and the ferromagnetism with high Curie temperature $({T}_{\mathrm{C}}>300\phantom{\rule{0.16em}{0ex}}\mathrm{K})$. To clarify the mechanism of the $\text{high}\text{\ensuremath{-}}{T}_{\mathrm{C}}$ ferromagnetism, we have investigated the electronic structure and magnetic properties of an $({\mathrm{In}}0.94,{\mathrm{Fe}}0.06)\mathrm{Sb}$ thin film by performing x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements at the Fe ${L}2,3$ edges. The magnetic-field $({\ensuremath{\mu}}0H)$ dependence of the XMCD spectra reveals that there are ferromagneticlike Fe and paramagneticlike Fe components in the (In,Fe)Sb thin film. The XAS and XMCD spectra of the ferromagneticlike and paramagneticlike Fe components resemble those of other Fe-doped FMSs and extrinsic oxides, respectively. The finite value of the ratio between the orbital and spin magnetic moments estimated by applying the XMCD sum rules indicates that the valence state of the Fe ions substituting for the In sites in (In,Fe)Sb is not purely ionic ${\mathrm{Fe}}3+$, but intermediate between ${\mathrm{Fe}}3+$ and ${\mathrm{Fe}}2+$. The qualitative correspondence between the ${\ensuremath{\mu}}0H$ dependence of the visible-light magnetic circular dichroism intensity and that of the XMCD intensity demonstrates that the Zeeman splitting of the InSb band is proportional to the net magnetization of the doped Fe. These results suggest that the ferromagnetism of (In,Fe)Sb originates from the Fe $3d$ orbitals hybridized with the host InSb bands.
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Research context

OpenAlex topics: ZnO doping and properties · Chalcogenide Semiconductor Thin Films · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

Materials Sciences Research Center, Japan Atomic Energy Agency, Sayo-gun, Hyogo 679-5148, Japan

Department of Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

Department of Physics and Center for Quantum Technology and National Tsing Hua University, Hsinchu 30013, Taiwan

Center for Spintronics Research Network, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Funding

Core Research for Evolutional Science and Technology · Japan Science and Technology Agency · Japan Atomic Energy Agency

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