Single-exciton trapping in an electrostatically defined two-dimensional semiconductor quantum dot
Abstract
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Electronic and Structural Properties of Oxides
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Affiliations
Department of Physics, University of Arizona, 1118 East 4th Street, Tucson, Arizona 85721, USA
IAMM Diffraction Facility, Institute for Advanced Materials and Manufacturing, University of Tennessee, Knoxville, 2641 Osprey Vista Way, Knoxville, Tennessee 37920, USA
Department of Materials Science and Engineering, University of Tennessee, Knoxville, 1508 Middle Drive, Knoxville, Tennessee 37996, USA; Materials Science and Technology Division, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831, USA; and Department of Physics and Astronomy, University of Tennessee, Knoxville, 1408 Circle Drive, Knoxville, Tennessee 37996, USA
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Funding
National Science Foundation · Army Research Office · Air Force Office of Scientific Research · Gordon and Betty Moore Foundation · Japan Society for the Promotion of Science