journal article·2023-05-30

Surface anisotropic magnetoresistance in the antiferromagnetic semiconductor CrSb2

K. Nakagawa, M. Kimata, T. Yokouchi, Y. Shiomi

Physical Review B· Volume 107· Issue 18
Publisher page

Abstract

We report on large anisotropic magnetoresistance (AMR) in surface states of an antiferromagnetic semiconductor $\mathrm{Cr}{\mathrm{Sb}}2$. The low-temperature measurement of angle-dependent magnetoresistance (ADMR) is performed in high magnetic fields up to 24 T. At 1.4 K, where the surface conduction is dominant, ADMR exhibits clear twofold symmetry consistent with AMR due to magnetic-field-induced change of antiparallel magnetic structure. The AMR magnitude reaches 9.3% despite the small angle dependence of the net magnetic moments, suggesting strong spin-orbit interaction in the surface conduction layer.
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Research context

OpenAlex topics: Topological Materials and Phenomena · 2D Materials and Applications · Advanced Condensed Matter Physics

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Affiliations

Department of Basic Science, The University of Tokyo, Tokyo 153-8902, Japan

Institute for Materials Research, Tohoku University, Sendai, Miyagi 980-8577, Japan

Funding

Tohoku University · Japan Science and Technology Agency · Japan Society for the Promotion of Science

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