journal article·2020-04-24Open access

Pressure-induced evolution of band structure in black phosphorus studied by P31 NMR

T. Fujii, Y. Nakai, Y. Akahama, K. Ueda, T. Mito

Physical Review B· Volume 101· Issue 16

Abstract

Two-dimensional layered semiconductor black phosphorus (BP), a promising pressure-induced Dirac system as predicted by band structure calculations, has been studied by $31\mathrm{P}$ nuclear magnetic resonance. Band calculations have been also carried out to estimate the density of states $D(E)$. The temperature and pressure dependences of the nuclear spin lattice relaxation rate $1/{T}1$ in the semiconducting phase are well reproduced using the derived $D(E)$, and the resultant pressure dependence of the semiconducting gap is in good accordance with previous reports, giving a good confirmation that the band calculation on BP is fairly reliable. The present analysis of $1/{T}1$ data with complemental theoretical calculations allows us to extract essential information, such as the pressure dependences of $D(E)$ and the chemical potential, as well as to decompose the observed $1/{T}1$ into intrinsic and extrinsic contributions. An abrupt increase in $1/{T}1$ at $P=1.63\phantom{\rule{0.16em}{0ex}}\mathrm{GPa}$ indicates that the semiconducting gap closes, resulting in the enhancement of conductivity.
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Research context

OpenAlex topics: 2D Materials and Applications · Heusler alloys: electronic and magnetic properties · MXene and MAX Phase Materials

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