Planckian properties of two-dimensional semiconductor systems
Source abstract
Abstract
The low-temperature resistivity and the temperature-dependent inelastic scattering rate of several different doped 2D semiconductor systems are described and discussed from the perspective of the Planckian hypothesis of the scattering rate having an intrinsic fundamental bound of ${k}B$T. The Planckian holds for all the systems with the scattering rate never exceeding k${}B$T by more than an order of magnitude either in the experiment or in the theory. In addition, the authors calculate the temperature-dependent electron-electron inelastic scattering rate by obtaining the temperature-dependent self-energy arising from the Coulomb interaction, also finding it to obey the Planckian bound within an order of magnitude at all densities and temperatures. A theory is provided for why such a generalized Planckian bound applies generically.
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Research context
OpenAlex topics: Quantum and electron transport phenomena · Graphene research and applications · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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