Low-energy electronic structure of perovskite and Ruddlesden-Popper semiconductors in the Ba-Zr-S system probed by bond-selective polarized x-ray absorption spectroscopy, infrared reflectivity, and Raman scattering
Abstract
Research context
OpenAlex topics: Perovskite Materials and Applications · Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films
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Affiliations
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, USA
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
Department of Physics and Astronomy and Quantum Science and Engineering Center, George Mason University, Fairfax, Virginia 22030, USA
Department of Materials Science and Engineering, Materials Research Laboratory, and National Center for Supercomputing Applications, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Institute of Nanotechnology, Karlsruhe Institute of Technology, Eggenstein-Leopoldshafen 76344, Germany
Funding
National Science Foundation · Army Research Office · U.S. Department of Energy