WS ₂ Nanoparticle-Decorated, Vertically Aligned SnS ₂ -Based High-Performance Heterostructures for Ambient-Stable Ultrafast Photodetection

The development of visible-light photodetectors with high responsivity, rapid response, and long-term ambient stability remains a critical challenge in optoelectronics. Here, we report a high-performance photodetector based on a vertically aligned SnS 2 film interfaced with WS 2 nanoparticles, forming a p–n heterojunction. This device is fabricated using a scalable two-step method─chemical vapor deposition (CVD) for SnS 2 growth and solution-based drop-casting for WS 2 deposition─enabling precise control over the heterointerface, but trap states are inevitable due to the use of thermal CVD and the drop-casting method. The resulting photodetector exhibits remarkable optoelectronic characteristics, including a responsivity of 0.76 A/W, a detectivity of 7.56 × 10 11 Jones, a photo-to-dark current ratio of 119, and a fast rise time of 0.297 ms under visible illumination. These performance metrics are directly attributed to the optimized heterointerface, where the built-in electric field at the nanoscale WS 2 /SnS 2 junctions promotes efficient charge separation and minimizes recombination losses. Notably, the device retains over 95% of its initial performance even after 1 week of ambient exposure, highlighting its superior environmental robustness. This work introduces an interface-engineering strategy that leverages the unique electronic properties of earth-abundant, nontoxic two-dimensional materials, offering a viable pathway for scalable, high-speed, and stable photodetectors suitable for next-generation optoelectronic systems.