journal article·2022-08-09Open access

Composite excitonic states in doped semiconductors

Dinh Van Tuan, Hanan Dery

Physical Review B· Volume 106· Issue 8

Abstract

We present a theoretical model of composite excitonic states in doped semiconductors. Many-body interactions between a photoexcited electron-hole pair and the electron gas are integrated into a computationally tractable few-body problem, solved by the variational method. We focus on electron-doped monolayer (ML)-$\mathrm{Mo}{\mathrm{Se}}2$ and ML-$\mathrm{W}{\mathrm{Se}}2$ due to the contrasting character of their conduction bands. In both cases, the core of the composite is a tightly bound trion (two electrons and a valence-band hole) surrounded by a region depleted of electrons. The composite in ML-$\mathrm{W}{\mathrm{Se}}2$ further includes a satellite electron with different quantum numbers. The theory is general and can be applied to semiconductors with various energy-band properties, allowing one to calculate their excitonic states and to quantify the interaction with the Fermi sea.
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Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627, USA

Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA

Funding

U.S. Department of Energy · Office of Naval Research

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