Memory Window Expansion via Defect-Induced Charge Trapping in Graphene/h-BN/ReS2 Floating-Gate Devices
Abstract
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices
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Affiliations
Institute of Laser Engineering, School of Physics and Optoelectronic Engineering
Beijing University of Technology
Nanofabrication Laboratory
National Center for Nanoscience and Technology
College of Chemistry and Chemical Engineering
Inner Mongolia University
Department of Mechanics and Engineering Science, State Key Laboratory for Turbulence and Complex Systems, College of Engineering
Peking University
Key Laboratory of Optoelectronics Technology of Education, School of Information Science and Technology
School of Materials Science and Engineering
Nanyang Technological University
Funding
National Key Research and Development Program of China · National Research Foundation Singapore · Natural Science Foundation of Inner Mongolia Autonomous Region · National Natural Science Foundation of China · Chinese Academy of Sciences