journal article·2020-08-07Open access

Landau level spectroscopy of Bi2Te3

I. Mohelský, A. Dubroka, J. Wyzula, A. Slobodeniuk, G. Martinez, Y. Krupko, B. A. Piot, O. Caha, J. Humlíček, G. Bauer, G. Springholz, M. Orlita

Physical Review B· Volume 102· Issue 8

Abstract

Bismuth telluride is a widely explored material in the condensed matter community and one of the first experimentally identified as a topological insulator. Nevertheless, despite considerable effort, the bulk electronic band structure of Bi${}2$Te${}3$ is known only partially. Here, the authors present a magneto-optical study of Bi${}2$Te${}3$, which provides one with compelling evidence that bismuth telluride is a direct-gap semiconductor, with a multiple valley degeneracy and charge carriers that closely resemble massive Dirac electrons.
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Research context

OpenAlex topics: Topological Materials and Phenomena · Advanced Thermoelectric Materials and Devices · 2D Materials and Applications

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