Characterization of the EuZrO₃/KTaO₃ Interface: Tunable Carrier Density and Long-Range Spin Transport

Among the perovskite oxide family, KTaO 3 has recently attracted considerable interest as a versatile platform for the realization of two-dimensional electron gas. In this paper, we report a conducting interface between the EuZrO 3 film and the KTaO 3 (001) single crystal and demonstrate the wide controllable carrier density and long precession distance. The carrier density and mobility can be controlled by the deposition temperature and film thickness, and the change exceeds about 2 orders of magnitude. Additionally, we observed a negative magnetic resistance which occurs only when B i < B SO at low temperatures, indicating the dominance of weak localization in this region. The wide-range tunable carrier density and long spin precession distance (∼50.82 nm) in the intrinsic state demonstrate that the interface has the potential for spin transport.