Source abstract
Abstract
Perovskite quantum dots (PeQDs) are promising nanoscale emitters in a generation of high-performance, large-area, and low-cost light-emitting diodes (LEDs) due to their superior emissive properties and excellent solution processability. Despite the tremendous advancement in luminescence efficiency in PeQDs, the design principle of the hole-transporting layer for PeQDs-based LEDs is still limited. Here, we investigate the discrepancy in electroluminescence properties of PeQDs-based LEDs with two widely used hole-transporting layers, namely, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) and poly(9,9-dioctylfluorene- co -N-(4-(3-methylpropyl)) diphenylamine) (TFB). The results show that the TFB-based PeQD-LEDs exhibit much inferior performance than the PTAA-based device (7% vs 18% for external quantum efficiency) although the PeQDs show better optical properties when depositing on TFB hole-transporting layers. Theoretical calculation and comprehensive spectroscopic analysis indicate a weaker interaction between PeQDs and TFB polymers, which is attributed to the larger steric hindrance of TFB than that of PTAA. As a result, electrical characterizations identify a poor hole injection efficiency from the TFB to the PeQDs emissive layer when compared with the PTAA hole-transporting layers, thus leading to poor device performance. This work reveals the interaction between the hole-transporting layer and PeQDs on the performance of electroluminescence beyond the energy level and mobility of hole-transporting materials, which promotes an understanding of the hole injection mechanism in PeQDs-based LEDs.
Source: openalex_inverted_index · Quality: baseline
Affiliations
Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi 030000, China
Quantum Dot Optical Material and Technology Innovation Team, Guangdong ODIMING Optoelectronic Tech. Co., Ltd., Zhaoqing 526020, China
Funding
Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering · China Postdoctoral Science Foundation · Wenzhou key scientific and technological innovation research projects · Institute of Wenzhou, Zhejiang University