Large-Area Nanofabrication of Partially Embedded Nanostructures for Enhanced Plasmonic Hot-Carrier Extraction

When plasmonic nanoparticles are coupled with semiconductors, highly energetic hot carriers can be extracted from the metal–semiconductor interface for various applications in light energy conversion. However, the current quantum yields for hot-electron extraction are generally low. An approach for increasing the extraction efficiency consists of maximizing the contact area between the surface of the metal nanostructure and the electron-accepting material. In this work, we developed an innovative, simple, and scalable fabrication technique that partially embeds colloidal plasmonic nanostructures within a semiconductor TiO2 layer without utilizing any complex top-down nanofabrication method. The successful embedding is confirmed by scanning electron microscopy and atomic force microscopy imaging. Using visible-pump, near-IR probe transient absorption spectroscopy, we also provide evidence that the increase in the surface contact area between the nanostructures and the electron-accepting material leads to an increase in the amount of hot-electron injection into the TiO2 layer.