journal article·2025-06-20

Liquid Metal Based Synthesis of GaN Nanosheets with Ag Nanoparticle Modification for Enhanced Ultraviolet Photodetection

Fei Li, Junbiao Wu, Cong Luo, Shanhao Ze, Tongxiang Chen, Zhiguo Zhang, Fei Liu, Jing Li, Baodan Liu

ACS Applied Nano Materials· Volume 8· Issue 24
Publisher page

Abstract

In this study, we propose a liquid metal-assisted synthesis technique for high-quality two-dimensional gallium nitride (2D GaN) nanosheets and fabricate high-performance ultraviolet (UV) photodetectors based on this approach. Silver (Ag) nanoparticles (NPs) are deposited on the 2D GaN surface via magnetron sputtering to induce the localized surface plasmon resonance (LSPR), thereby enhancing the device’s optoelectronic performance. The results show that Ag NPs modification significantly improves the optical absorption of 2D GaN in the UV–visible range, enhances the collection efficiency of photogenerated carriers, and reduces surface defect states. The optimized photodetector, operating at a bias voltage of 10 V, achieves a higher photocurrent (7.32 × 10 –5 A) and lower dark current (1.1 × 10 –9 A), with the photocurrent-to-dark current ratio ( I light / I dark ) increasing from 10 2 to 10 4 . The responsivity ( R λ ) is improved from 0.749 A/W to 2.01 A/W, the external quantum efficiency (EQE) increases from 254 to 683%, and the specific detectivity ( D *) enhances from 1.99 × 10 9 to 5.34 × 10 10 Jones. Additionally, the device exhibits an ideal linear relationship between photocurrent and incident light intensity (θ ≈ 1.02), demonstrating improved stability and predictability in its photoresponse. This study highlights the critical role of nanoscale engineering in advancing UV optoelectronic device performance and provides an effective strategy for designing high-performance UV photodetectors.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering, Northeastern University, No. 11, Wenhua Road, Shenyang 110819, China

Foshan Graduate School of Innovation, Northeastern University, No. 2, Zhihui Road, Shunde District, Foshan 528300, China

China Electronics Technology Wide Band Gap Semiconductors Co., Ltd.

State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology

Sun Yat-sen University

Funding

Basic and Applied Basic Research Foundation of Guangdong Province · Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China · Scientific Research Project of Foshan Talents · State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University) · Research and the Development Start-up Foundation of Foshan Graduate School of Innovation, Northeastern University

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