InSe Nanosheets with In/Au Electrodes for Self-Driven, High Storage Performance Photodetectors

InSe, a semimetallic chalcogenide compound, has gained attention for its exceptional characteristics. This study focuses on the development of a high-performance self-driven photodetector and electric storage device using InSe as the conductive channel and In/Au deposition as the electrodes. The device displayed a remarkable combination of light detection and storage capabilities, with a detect range of 447 to 940 nm under no bias voltage, and a maximum response of 2300 A/W at 1 V bias and 90 mA/W at 0 V bias as well as a response time and detectivity of 56 ms and 2.8 × 10 10 Jones, respectively. Furthermore, the integrated device includes electric storage capabilities, maintaining clear high and low resistance states even after 300 cycles, surpassing the performance of previous intrinsic InSe devices. By utilizing In/Au deposition as the electrodes on InSe, the Ohmic contact is formed on the surface, leading to significant charge transfer at the In/InSe interface and enhancing the optoelectronic performance of the device.