Si-Based GaN Light-Emitting Diodes with MoS2 Nanosheet-Decorated Fabry–Perot Waveguide Structure
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · 2D Materials and Applications · ZnO doping and properties
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Affiliations
GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
College of Physics and Key Laboratory of Aerospace Information Materials and Physics (MIIT), Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Funding
Natural Science Foundation of Jiangsu Province · Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China · State Key Laboratory of Luminescence and Applications