Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device Design
Abstract
Research context
OpenAlex topics: Nanowire Synthesis and Applications · ZnO doping and properties · Semiconductor materials and interfaces
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Affiliations
School of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China
ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China
Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
Istituto per la Microelettronica e i Microsistemi, IMM-CNR, via fosso del cavaliere 100, 00133 Roma, Italy
Istituto di Struttura della Materia, ISM-CNR, via fosso del cavaliere 100, 00133 Roma, Italy
Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom
China Tower Corporation Limited, No. 9 Dongran North Street, Beijing 100195, China
London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310013, China
Funding
Engineering and Physical Sciences Research Council · Leverhulme Trust · EPSRC National Epitaxy Facility