journal article·2023-04-14

Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography

Dhanushkodi D. Mariappan, Sanha Kim, Junjie Zhao, Hangbo Zhao, Ulrich Muecke, Karen Gleason, Akintunde Ibitayo Akinwande, A. John Hart

ACS Applied Nano Materials· Volume 6· Issue 7
Publisher page

Abstract

To achieve high-performance printed electronic devices, scalable and cost-effective printing of high-quality metallic electrodes with narrow gaps, such as for transistors with short channel lengths, is desirable. Here, we demonstrate short channel (<10 μm) transistors, using thin (<100–200 nm) electrodes fabricated by flexographic printing with nanoporous stamps, with single-wall carbon nanotubes (SWCNTs) as the network semiconductor. The nanoporous stamps comprise polymer-coated vertically aligned carbon nanotubes and facilitate control of the printed ink thickness in the 50–200 nm range. The measured on–off ratio and mobility meet or exceed those of previously reported SWCNT network transistors fabricated by alternative printing methods.
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Research context

OpenAlex topics: Carbon Nanotubes in Composites · Nanofabrication and Lithography Techniques · Neuroscience and Neural Engineering

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge 02139, Massachusetts, United States

Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, South Korea,

Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge 02139, Massachusetts, United States

Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge 02139, Massachusetts, United States

Funding

Massachusetts Institute of Technology · Division of Civil, Mechanical and Manufacturing Innovation · BAE Systems

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