All-Solution-Processed Carbon Nanotube Floating Gate Memories

Carbon nanotubes (CNTs) are unique materials that can be used in both electrodes and channels in field-effect transistors because they can be separated into semiconducting and metallic CNTs (s-CNTs and m-CNTs). In this paper, all-solution-processed CNT floating gate memories (FGMs) are demonstrated by combining 99% m-CNTs for electrodes and s-CNTs for channels. The electrical and memory performance is evaluated by controlling the m-CNT FG density, and the program and erase characteristics are discussed in detail. From the results, we conclude that the m-CNT FG density is a critical design variable when realizing all-CNT FGMs or their memory modules.