DataVXACS Applied Nano MaterialsPaper
journal article·2020-04-24

Polymorphic In-Plane Heterostructures of Monolayer WS2 for Light-Triggered Field-Effect Transistors

Pawan Kumar, Kartikey Thakar, Navneet Chandra Verma, Jayeeta Biswas, Takuya Maeda, Ahin Roy, Kenji Kaneko, Chayan Kanti Nandi, Saurabh Lodha, Viswanath Balakrishnan

ACS Applied Nano Materials· Volume 3· Issue 4
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Source abstract

Abstract

The realization of next-generation transition-metal dichalcogenide based nanoscale devices demands stringent control over coherent in-plane heterostructures of atomically thin monolayers with exceptional properties. In this paper, we report atmospheric-pressure chemical vapor deposition growth of large-domain, coherent polymorphic in-plane heterostructures of monolayer WS2 on a SiO2/Si substrate with intriguing optical and electronic properties. The formation of in-plane heterostructures with 1H and 1T polymorphs was extensively analyzed using a variety of spectroscopic as well as microscopic techniques, along with lifetime luminescence imaging. High-angle annular dark-field scanning transmission electron microscopy revealed coexistence of the heterophases in monolayer WS2 heterostructures. Back-gated photoconductivity measurements in nanoscale field-effect-transistor device geometry and the rational design of a WS2 heterostructure pattern demonstrate optoelectronic applications.
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Research context

NanomaterialsElectronic materialsMaterials processing

OpenAlex topics: 2D Materials and Applications · Nanowire Synthesis and Applications · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Engineering, Indian Institute of Technology Mandi, Kamand, Himachal Pradesh 175005, India

Department of Electrical & System Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States

Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India

School of Basic Sciences, Indian Institute of Technology Mandi, Kamand, Himachal Pradesh 175005, India

Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan

Material Research Center, Indian Institute of Science, Bangalore, Karnataka 560012, India

Funding

Council of Scientific and Industrial Research · Ministry of Electronics and Information technology · Core Research for Evolutional Science and Technology · Department of Science and Technology, Ministry of Science and Technology · Japan Society for the Promotion of Science

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