DataVXACS Applied Nano MaterialsPaper
journal article·2020-03-27Open access

InGaN Nanohole Arrays Coated by Lead Halide Perovskite Nanocrystals for Solid-State Lighting

Modestos Athanasiou, Paris Papagiorgis, Andreas Manoli, Caterina Bernasconi, Nicolas Poyiatzis, Pierre-Marie Coulon, Philip Shields, Maryna I. Bodnarchuk, Maksym V. Kovalenko, Tao Wang, Grigorios Itskos

ACS Applied Nano Materials· Volume 3· Issue 3
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Source abstract

Abstract

In this work, we demonstrate efficient light downconversion via FRET in InGaN/GaN multiple quantum well (MQW) nanohole arrays, coated with green-emitting CsPbBr 3 and FAPbBr 3 nanocrystals (NCs) and near-infrared (IR) FAPbI 3 NC overlayers for solid-state lighting. Patterning the InGaN MQW into nanohole arrays allows a minimum nitride-NC separation while increasing the heterointerfacial area, thus improving simultaneously the nonradiative and radiative transfer efficiencies. Detailed spectroscopic studies of steady-state and time-resolved photoluminescence indicate a significant reduction in the quantum well photoluminescent decay time in the presence of NCs, accompanied by a significant concurrent increase of the NC integrated emission, providing evidence of efficient light down-conversion mediated by FRET with efficiencies as high as 83 6% in the green and 74 5% in the near-IR.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: Perovskite Materials and Applications · Luminescence Properties of Advanced Materials · Optical properties and cooling technologies in crystalline materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Experimental Condensed Matter Physics Laboratory, Department of Physics, University of Cyprus, Nicosia 1678, Cyprus

Institute of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, CH-8093 Zürich, Switzerland

Laboratory for Thin Films and Photovoltaics, Empa−Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland

Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 4DE, United Kingdom

Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom

Funding

Research Promotion Foundation · H2020 Marie Sklodowska-Curie Actions

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