journal article·2026-07-18

Intersubband optical absorption in the GaN/AlN quantum wire with donor doping

Sami Ortakaya

Philosophical Magazine· Volume 106· Issue 13-14
Publisher page

Abstract

In this study, we investigate the optical absorption within the conduction subbands of a cylindrical GaN/AlN quantum wire. We analyse the optical absorption rate and the real part of the dielectric function for quantum wire (QWR) in the presence of donor-impurity states. The results cover that the density of states associated with free motion in the QWR structure leads to a lower optical absorption compared to the quantum dots, as evidenced by the optical spectra. This study advances the understanding of GaN/AlN heterostructures by offering a useful analysis of the optical properties of QWRs, especially under donor doping. As a result, the outcomes provide a clear evidence of the effect of semiconductor nanostructures on the optical properties of optoelectronic devices.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Plasmonic and Surface Plasmon Research · Boron and Carbon Nanomaterials Research

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Affiliations

Institute for Globally Distributed Open Research and Education (IGDORE)

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